Похожие презентации:
Lasers. Tutorial 2
1.
ELEC 5511: Optical Communication SystemsSchool of Electrical and Information Engineering
The University of Sydney
Tutorial 2:
Lasers
2.
Tutorial 2: Lasers1.
An injection laser has a GaAs active region with a bandgap energy 2.3x 10-19
J. Estimate the wavelength of optical emission from the device and
determine the linewidth in Hz when the measured spectral width is 0.1 nm.
2.3x 10-19
Eg = hf = h
3 x 108
c
hc 6.626 ´10-34 ´ 3´108
= 0.864 μm
l= =
-19
Eg
2.3´10
l
6.626 x 10-34
(0.864 x 10-6)2
Df l 2
Dl = l
= Df
f
c
0.1x 10-9
3x
108
Df =
c
l
2
Dl =
3´108 ´0.1´10-9
(0.864 ´10 )
= 40 GHz
-6
2
3.
Tutorial 2: Lasers2. A semiconductor laser can attain a maximum optical gain of gmax = 2000 m-1.
The attenuation to light propagation in the semiconductor material, without
amplification, is 600 m-1.
(i) If the reflection coefficients of the cavity reflectors are R1 = R2 = 0.35,
what is the minimum value for the length of the cavity that must be used for
the laser?
Required Gain
1 æ 1 ö
g>a +
ln ç
÷
2L è R1R2 ø
2000 m-1
æ 1 ö
1
gmax = a +
ln ç
÷
2Lmin è R1R2 ø
600 m-1
0.35
æ 1 ö
Lmin =
ln ç
÷
2 ( gmax - a ) è R1R2 ø
1
= 750 μm
4.
Tutorial 2: Lasers(ii) If the cavity length is required to be L = 475 μm and R1 = R2 = R, what is the
minimum value for the reflector value R?
2000 m-1
1 æç 1 ö÷
gmax = a +
ln ç
2÷
2L è [ Rmin ] ø
600 m-1
475μm
æ 1 ö
÷
2L ( gmax - a ) = ln çç
2÷
è [ Rmin ] ø
Rmin =
1
2 L( gmax -a )
e
=
¾ ¾®
e
2 L( gmax -a )
e
1
2´475´10 ´( 2000-600)
e
-6
1
=
2
[ Rmin ]
= 0.514
5.
Tutorial 2: Lasers3. The longitudinal modes of a semiconductor laser emitting at a
wavelength of 1.1 μm are separated in wavelength by 0.8 nm. The
refractive index of the semiconductor is n = 3.6.
(i) Determine the length of the optical cavity.
Wavelength Separation between adjacent modes
(1.1 x 10-6)2
0.8 x 10-9
Dl =
l2
2 ´n´ L
3.6
1.1´10 )
(
l
L=
=
2 ´n´Dl 2 ´3.6 ´0.8´10-9
-6 2
2
= 210 μm
6.
Tutorial 2: Lasers(ii) If the loss coefficient of the semiconductor is 1000 dB/m, what is
the minimum gain coefficient, in dB/m, required for lasing.
Minimum gain ( assume R1=R2=R)
1 æ 1 ö
gmin = a +
ln ç 2 ÷
2L è R ø
A[dB/m] 1000
=
= 230.4m-1
a[m-1 ] =
4.34
4.34
æ 1 ö
1
gmin = 230.4 +
ln ç
-6
2÷
2(210 ´10 ) è (0.319) ø
= 5664m-1
G[dB/m] = 4.34 ´ 5664
= 24581.76 dB/m
7.
Tutorial 2: Lasers4. Semiconductor lasers and light emitted diodes are commonly found in
optical communication systems. Which of these optical sources are
preferred for long distance communication systems? Why?
LEDs properties:
High dispersion
Wide spectral width
Low light intensity (High divergence)
Low output optical powers,
Low Coupling efficiency
High loss
• Semiconductor lasers properties:
Narrow line widths
High light intensity
High Coupling efficiency
Less dispersion problem than
LEDs
Higher output optical powers,
lower losses than LEDs
Thus SC lasers are preferred for long distance communication
8.
Tutorial 2: Lasers5. The light-current characteristic of the semiconductor laser is shown below.
Assume that the laser is biased at 25 mA and that the frequency of the
modulating signal is within the laser bandwidth.
9.
Tutorial 2: Lasers(i) Fore peak value current of 10 mA (a) Plot the input current and
output power as a function of time
Output Optical Power
waveform
Input current
waveform
Threshold
current
10.
Tutorial 2: Lasersb) Does the laser behave as a linear device for this modulating
current? Why?
The laser behaves as a linear device for
this modulating current because the
modulating current’s amplitude range
fall entirely in the linear region.
i.e. not below the threshold current or
in the saturation region
The output optical power is pure sinusoid of the same frequency
11.
Tutorial 2: Lasers(ii) Fore peak value current of 20 mA (a) Plot the input current and
output power as a function of time
Output Optical Power
waveformç
Input current
waveform
Clipping
12.
Tutorial 2: Lasersb) Does the laser behave as a linear device for this
modulating current? Why?
The laser is not linear for this input current
The output power is clipped when I < Ith
not a replica of the input sinusoid current